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K7A403601B

Samsung semiconductor

128Kx36 & 128Kx32 Synchronous SRAM

K7A403601B K7A403201B Preliminary 128Kx36 & 128Kx32 Synchronous SRAM Document Title 128Kx36 & 128Kx32-Bit Synchronous ...


Samsung semiconductor

K7A403601B

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K7A403601B K7A403201B Preliminary 128Kx36 & 128Kx32 Synchronous SRAM Document Title 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History 0.0 1. Initial draft 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16, from 330mA to 270mA at -15, from 300mA to 250mA at -14, ISB1 ; from 100mA to 80mA 0.2 1 Delete Pass-Through 0.3 1. Add x32 org and industrial temperature Draft Date May. 15. 2001 June. 12. 2001 Remark Preliminary Preliminary June. 25. 2001 Agu. 11. 2001 Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. - 1 - Aug 2001 Rev 0.3 K7A403601B K7A403201B Preliminary 128Kx36 & 128Kx32 Sy...




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