K6X4016T3F

K6X4016T3F Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No 0.0 0.1 History Initial draft Revised - Added Commercial product - Deleted 44-TSOP2-400R Package Type. - Added 55ns product(@ 3.0V~3.6V) Finalized Revised - Changed ICC(Operating power supply current) from 4mA to 2mA - Changed ICC1(Average operating current) from 4mA to 3mA - Changed ICC2(Average operating current) from 40mA to 25mA - Changed ISB1(Standby Current(CMOS), Commercial) from 15µA to 10µA - Changed ISB1(Standby Current(CMOS), Industrial) from 20µA to 10µA - Changed ISB1(Standby Current(CMOS), Automotive) from 30µA to 20µA - Changed IDR(Data retention current, Commercial) from 15µA to 10µA - Changed IDR(Data retention current, Industrial) from 20µA to 10µA - Changed IDR(Data retention current, Automotive) from 30µA to 20µA Draft Date July 29, 2002 December 2, 2002 Remark Preliminary Preliminary 1.0 August 8, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 August 2003 K6X4016T3F Family 256Kx16 bit Low Power and Low Voltage CMOS Static RAM FEATURES Process Technology: Full CMOS Organization: 256K x16 Power Supply Voltage: 2.7~3.6V Low Data Retention Voltage: 2V(Min)...