K6X4016C3F

K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type. Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 10mA to 7mA - Changed ICC2 from 50mA to 30mA - Changed ISB from 3mA to 0.4mA - Changed IDR(Commercial) from 15µA to 12µA - Changed IDR(industrial) from 20µA to 12µA - Changed IDR(Automotive) from 30µA to 25µA Draft Date July 26, 2002 November 29, 2002 Remark Preliminary Preliminary 1.0 September 16, 2003 final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 September 2003 K6X4016C3F Family 256Kx16 bit Low Power full CMOS Static RAM FEATURES Process Technology: Full CMOS Organization: 256Kx16 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2V(Min) Three state output and TTL compatible Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X4016C3F families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature range and small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up op...