K6X0808T1D

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA to 2mA - Changed ICC2 from 25mA to 20mA - Changed ISB from 3mA to 0.4mA - Changed ISB1 for K6X0808T1D-F from 10µA to 6µA - Changed ISB1 for K6X0808T1D-F from 20µA to 10µA - Changed IDR for K6X0808T1D-F 10µA to 6µA - Changed IDR for K6X0808T1D-Q 20µA to 10µA - Errata correction Draft Data October 09, 2002 November 08, 2002 Remark Preliminary Preliminary 0.2 March 27, 2003 Preliminary 1.0 December 16, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 December 2003 K6X0808T1D Family FEATURES Process Technology: Full CMOS28 Organization: 32K x 8 Power Supply Voltage: 2.7~3.6V Low Data Retention Voltage: 1.5V(Min) Three state outputs Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM GENERAL DESCRIPTION The K6X0808T1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also su...