K6X0808C1D

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X0808C1D-F 15µA to 10µA - Changed IDR for K6X0808C1D-Q 25µA to 20µA - Errata correction Draft Data October 09, 2002 December 16, 2003 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 December 2003 K6X0808C1D Family 32Kx8 bit Low Power full CMOS Static RAM FEATURES Process Technology: Full CMOS Organization: 32K x 8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM GENERAL DESCRIPTION The K6X0808C1D families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Ra...