K6R4008V1D

PRELIMINARY K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Add Low Ver. Change Icc, Isb and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Draft Data Aug. 20. 2001 Sep. 19. 2001 Nov. 3. 2001 Remark Preliminary Preliminary Preliminary ICC(Industrial) ISB ISB1(L-ver.) Rev. 0.3 1. Correct AC parameters : Read & Write Cycle mA 2. Delete Low Ver. 3. Delete Data Retention Characteristics 1. Delete 12ns,15ns speed bin. 2. Change Icc for Industrial mode. Item 8ns ICC(Industrial) 10ns 1. Add the Lead Free Package type. Preliminary Rev. 1.0 Dec.18. 2001 Previous 100mA 85mA Current 90mA 75mA July. 26, 2004 Final Rev. 2.0 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev. 2.0 July 2004 PRELIMINARY K6R4008V1D 4Mb Async. Fast SRAM Ordering Information Org. 1M x4 K6R4004V1D-J(K)C(I) 08/10 K6R4008C1D-J(K...