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K6R4004C1C-I Datasheet

Part Number K6R4004C1C-I
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1Mx4 Bit High Speed Static RAM
Datasheet K6R4004C1C-I DatasheetK6R4004C1C-I Datasheet (PDF)

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 2.

  K6R4004C1C-I   K6R4004C1C-I






Part Number K6R4004C1C-E
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1Mx4 Bit High Speed Static RAM
Datasheet K6R4004C1C-I DatasheetK6R4004C1C-E Datasheet (PDF)

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 2.

  K6R4004C1C-I   K6R4004C1C-I







Part Number K6R4004C1C-C
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 1Mx4 Bit High Speed Static RAM
Datasheet K6R4004C1C-I DatasheetK6R4004C1C-C Datasheet (PDF)

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 2.

  K6R4004C1C-I   K6R4004C1C-I







1Mx4 Bit High Speed Static RAM

K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. ICC 190mA 185mA 180mA Previous Isb 70mA Isb1 20mA ICC 160mA 150mA 140mA 130mA Current Isb 60mA Isb1 10mA Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 Mar. 27. 2000 Final 10ns 12ns 15ns 20ns 3.3 Added Extended temperature range www.DataSheet4U.com The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 3.0 March 2000 K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E 1M x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES • Fast Access Time 10,.


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