DatasheetsPDF.com

K6F2016U4E Datasheet

Part Number K6F2016U4E
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F2016U4E DatasheetK6F2016U4E Datasheet (PDF)

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary .

  K6F2016U4E   K6F2016U4E






Part Number K6F2016U4G
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 2Mb(128K x 16 bit) Low Power SRAM
Datasheet K6F2016U4E DatasheetK6F2016U4G Datasheet (PDF)

K6F2016U4G Family Preliminary CMOS SRAM www.DataSheet4U.com 2Mb(128K x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY.

  K6F2016U4E   K6F2016U4E







Part Number K6F2016U4E-F
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F2016U4E DatasheetK6F2016U4E-F Datasheet (PDF)

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary .

  K6F2016U4E   K6F2016U4E







128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2016U4E Family Document Title CMOS SRAM 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize - Change ICC2 from 21 to 26mA for 55ns product. - Change ICC2 from 17 to 20mA for 70ns product. - Remove "A1 Index Mark" of 48-TBGA package bottom side Revise - Changed 48-TBGA vertical dimension E1(Typical) 0.55mm to 0.58mm E2(Typical) 0.35mm to 0.32mm Draft Date February 21, 2001 April 30, 2001 Remark Preliminary Final 2.0 September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 2.0 September 2001 K6F2016U4E Family FEATURES • • • • • • CMOS SRAM GENERAL DESCRIPTION The K6F2016U4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 128K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.0.


2005-04-07 : TC35080P    MC846    6N-60    SSI78Q8330    SSI78P7220    SSI78P8060    MP4013    LM204    S2A    S2A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)