K6F1616U6A

www.DataSheet4U.com K6F1616U6A Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize - added 45ns product - changed ICC1 : 3mA to 2mA - changed ICC2 : 38mA to 30mA for 55ns product 30mA to 25mA for 70ns product Revise - Deleted 45ns product Draft Date September 11, 2001 January 4, 2002 Remark Preliminary Final 1.1 September 11, 2002 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.1 September 2002 K6F1616U6A Family FEATURES Process Technology: Full CMOS Organization: 1M x16 Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-7.50x9.50 CMOS SRAM GENERAL DESCRIPTION The K6F1616U6A families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F1616U6A-F Operating Tempe...