K5A3380YTC-T855

K5A3x80YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date November 6, 2002 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 November 2002 K5A3x80YT(B)C Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM FEATURES Power Supply voltage : 2.7V to 3.3V Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x 16 bit Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 22 mA Standby Current : 0.5 µA Secode(Security Code) Block : Extra 64KB Block (Flash) Block Group Protection / Unprotection (Flash) Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb Flash Endurance : 100,000 Program/Erase Cycles Minimum SRAM Data Retention : 1.5 V (min.) Industrial Temperature : -40°C ~ 85°C Package : 69-ball TBGA Type - 8 x...