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K4X56163PE-LG

Samsung semiconductor
Part Number K4X56163PE-LG
Manufacturer Samsung semiconductor
Description 16M x16 Mobile DDR SDRAM
Published Apr 7, 2005
Detailed Description K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-...
Datasheet PDF File K4X56163PE-LG PDF File

K4X56163PE-LG
K4X56163PE-LG

Overview
K4X56163PE-L(F)G 16M x16 Mobile DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.
8V power supply, 1.
8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 array ) - Internal Temperature Compensated Self Refresh - Driver strength ( 1, 1/2, 1/4, 1/8 ) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• E...


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