K4S640832F
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 May. 2003
* Samsung Elect...
K4S640832F
CMOS SDRAM
64Mbit SDRAM
2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Revision 1.1 May. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev.1.1 May. 2003
K4S640832F
Revision History Revision 0.0 (June, 2001) Revision 0.1 (Sep., 2001)
CMOS SDRAM
Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. < After > 5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Revision 1.0 (May, 2003)
Revision Changed (Confirmed revision will be 1.0)
Revision 1.1 (May, 2003)
Delete 100MHz speed
Rev.1.1 May. 2003
K4S640832F
2M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S640832F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance
CMOS technology. Synchronous design allows pr...