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K4S51163PF-YF Datasheet

Part Number K4S51163PF-YF
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 8M x 16Bit x 4 Banks Mobile-SDRAM
Datasheet K4S51163PF-YF DatasheetK4S51163PF-YF Datasheet (PDF)

K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Sel.

  K4S51163PF-YF   K4S51163PF-YF






Part Number K4S51163PF-Y
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 8M x 16Bit x 4 Banks Mobile-SDRAM
Datasheet K4S51163PF-YF DatasheetK4S51163PF-Y Datasheet (PDF)

K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Sel.

  K4S51163PF-YF   K4S51163PF-YF







8M x 16Bit x 4 Banks Mobile-SDRAM

K4S51163PF-Y(P)F 8M x 16Bit x 4 Banks Mobile-SDRAM FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • 1 /CS Support. • 2Chips DDP 54Balls FBGA( -YXXX -Pb, -PXXX -Pb Free). • • • • Mobile-SDRAM GENERAL DESCRIPTION The K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4S51163PF-Y(P)F75 K4S51163PF-Y(P)F90 K4S51163PF-Y(P)F1L Max Freq. 133MHz(CL=3),83MHz(CL=2) 111MHz(CL=3),83MHz(CL=2) 111MHz(CL=3.


2005-04-07 : TC35080P    MC846    6N-60    SSI78Q8330    SSI78P7220    SSI78P8060    MP4013    LM204    S2A    S2A   


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