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K4S51153LF

Samsung semiconductor

8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA


Description
K4S51153LF - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address ke...



Samsung semiconductor

K4S51153LF

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