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K4R441869B Datasheet

Part Number K4R441869B
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM
Datasheet K4R441869B DatasheetK4R441869B Datasheet (PDF)

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet. Direct RDRAM™ Page 0 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broa.

  K4R441869B   K4R441869B






Part Number K4R441869B-N(M)CK8
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM
Datasheet K4R441869B DatasheetK4R441869B-N(M)CK8 Datasheet (PDF)

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet. Direct RDRAM™ Page 0 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broa.

  K4R441869B   K4R441869B







Part Number K4R441869B-N(M)CK7
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM
Datasheet K4R441869B DatasheetK4R441869B-N(M)CK7 Datasheet (PDF)

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet. Direct RDRAM™ Page 0 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broa.

  K4R441869B   K4R441869B







Part Number K4R441869B-N(M)CG6
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM
Datasheet K4R441869B DatasheetK4R441869B-N(M)CG6 Datasheet (PDF)

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet. Direct RDRAM™ Page 0 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broa.

  K4R441869B   K4R441869B







Part Number K4R441869A-N(M)CK8
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Datasheet K4R441869B DatasheetK4R441869A-N(M)CK8 Datasheet (PDF)

K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.02 January 2000 Page -1 Rev. 1.02 Jan. 2000 K4R271669A/K4R441869A Revision History Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver. Direct RDRAM™ Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and cor.

  K4R441869B   K4R441869B







256K x 16/18 bit x 32s banks Direct RDRAMTM

K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet. Direct RDRAM™ Page 0 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two d.


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