K4M56163PE - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with ...
K4M56163PE - R(B)G/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
1.8V power supply. LV
CMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) DQM for masking. Auto refresh. 64ms refresh period (8K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA with 0.8mm ball pitch ( -RXXX : Leaded, -BXXX : Lead Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance
CMOS technology. Synchronous design make a device controlled precisely with the use of system clock and I/O transactions are possible on every clock cycle. The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION
Part No. K4M56163PE-R(B)G/F90 K4M56163PE-R(B)G/F1L Max Freq. ...