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K4M513233E Datasheet

Part Number K4M513233E
Manufacturers Samsung
Logo Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4M513233E DatasheetK4M513233E Datasheet (PDF)

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Supp.

  K4M513233E   K4M513233E






Part Number K4M513233E-MEC
Manufacturers Samsung
Logo Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4M513233E DatasheetK4M513233E-MEC Datasheet (PDF)

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Supp.

  K4M513233E   K4M513233E







Part Number K4M513233E-MC
Manufacturers Samsung
Logo Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4M513233E DatasheetK4M513233E-MC Datasheet (PDF)

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Supp.

  K4M513233E   K4M513233E







Part Number K4M513233E-L
Manufacturers Samsung
Logo Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4M513233E DatasheetK4M513233E-L Datasheet (PDF)

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Supp.

  K4M513233E   K4M513233E







Part Number K4M513233E-F75
Manufacturers Samsung
Logo Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4M513233E DatasheetK4M513233E-F75 Datasheet (PDF)

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Supp.

  K4M513233E   K4M513233E







Part Number K4M513233E-F1L
Manufacturers Samsung
Logo Samsung
Description 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet K4M513233E DatasheetK4M513233E-F1L Datasheet (PDF)

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Supp.

  K4M513233E   K4M513233E







4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M513233E - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • 2Chips DDP 90Balls FBGA with 0.8mm ball pitch ( -MXXX : Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M513233E-M(E)C/L/F75 K4M513233E-M(E)C/L/F1H K4M513233E-M(E)C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=.


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