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K4M511633E-Y Datasheet

Part Number K4M511633E-Y
Manufacturers Samsung
Logo Samsung
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet K4M511633E-Y DatasheetK4M511633E-Y Datasheet (PDF)

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Sup.

  K4M511633E-Y   K4M511633E-Y






Part Number K4M511633E-P
Manufacturers Samsung
Logo Samsung
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet K4M511633E-Y DatasheetK4M511633E-P Datasheet (PDF)

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Sup.

  K4M511633E-Y   K4M511633E-Y







Part Number K4M511633E-L
Manufacturers Samsung
Logo Samsung
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet K4M511633E-Y DatasheetK4M511633E-L Datasheet (PDF)

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Sup.

  K4M511633E-Y   K4M511633E-Y







Part Number K4M511633E-F75
Manufacturers Samsung
Logo Samsung
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet K4M511633E-Y DatasheetK4M511633E-F75 Datasheet (PDF)

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Sup.

  K4M511633E-Y   K4M511633E-Y







Part Number K4M511633E-F1L
Manufacturers Samsung
Logo Samsung
Description 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet K4M511633E-Y DatasheetK4M511633E-F1L Datasheet (PDF)

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Sup.

  K4M511633E-Y   K4M511633E-Y







8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • 1 /CS Support. • 2chips DDP 54Balls FBGA with 0.8mm ball pitch ( -YXXX : Leaded, -PXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M511633E-Y(P)C/L/F75 K4M511633E-Y(P)C/L/F1H K4M511633E-Y(P)C/L/F1L Max Freq. 133MHz(CL=3) 105MH.


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