K4F661612B,K4F641612B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,...
K4F661612B,K4F641612B
CMOS DRAM
4M x 16bit
CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode
CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced
CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
Part Identification - K4F661612B-TC/L(3.3V, 8K Ref., TSOP) - K4F641612B-TC/L(3.3V, 4K Ref., TSOP)
Fast Page Mode operation 2CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability LVTTL(3.3V) compatible inputs and outputs Unit : mW Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) packages +3.3V±0.3V power supply 4K 468 432 396
Active Power Dissipation Speed -45 -50 -60 Refresh Cycles Part NO. K4F661612B* K4F641612B Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms
RAS UCAS LCAS W
8K 360 324 288
FUNCTIONAL BLOCK DIAGRAM
Control Clocks Vcc Vss Lower Data in Buffe...