K4F171612D

K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES Part Identification - K4F171611D-J(T) (5V, 4K Ref.) - K4F151611D-J(T) (5V, 1K Ref.) - K4F171612D-J(T) (3.3V, 4K Ref.) - K4F151612D-J(T) (3.3V, 1K Ref.) Active Power Dissipation Unit : mW Speed 4K -50 -60 324 288 3.3V 1K 504 468 4K 495 440 5V 1K 770 715 Fast Page Mode operation 2 CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in 42-pin SOJ 4...