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K4E640812B Datasheet

Part Number K4E640812B
Manufacturers Samsung
Logo Samsung
Description 8M x 8bit CMOS Dynamic RAM
Datasheet K4E640812B DatasheetK4E640812B Datasheet (PDF)

K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilitie.

  K4E640812B   K4E640812B






Part Number K4E640812E
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
Datasheet K4E640812B DatasheetK4E640812E Datasheet (PDF)

K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilitie.

  K4E640812B   K4E640812B







Part Number K4E640812C
Manufacturers Samsung
Logo Samsung
Description 8M x 8bit CMOS Dynamic RAM
Datasheet K4E640812B DatasheetK4E640812C Datasheet (PDF)

K4E660812C,K4E640812C CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

  K4E640812B   K4E640812B







8M x 8bit CMOS Dynamic RAM

K4E660812B, K4E640812B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E660812B-JC/L(3.3V, 8K Ref., SOJ) - K4E640812B-JC/L(3.3V, 4K Ref., SOJ) - K4E660812B-TC/L(3.3V, 8K Ref., TSOP) - K4E640812B-TC/L(3.3V, 4K Ref., TSOP) • Extended Data Out Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • LVTTL(3.3V) compatible inputs and outputs • Active Power Dissipation Unit : mW Speed -45 -50 -60 • Refresh Cycles Part NO. K4E660812B* K4E640812B Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms RAS CAS W Control Clocks VBB Generator Vcc Vss • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • +3.3V±0.3V power supply 4K 4.


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