K4D551638F-TC

Target Spec K4D551638F-TC 256M GDDR SDRAM 256Mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.7 June 2004 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.7 (June 2004) Target Spec K4D551638F-TC Revision History Revision 1.7 (June 15, 2004) - Target Spec Changed VDD/VDDQ of K4D551638F-TC33 from 2.8V + 0.1V to 2.8V(min)/2.95V(max) 256M GDDR SDRAM Revision 1.6 (March 31, 2004) - Target Spec AC Changes : Refer to the AC characteristics of page 13 and 14. Revision 1.5 (March 18, 2004) - Target Spec Added K4D551638F-TC33 in the data sheet. Revision 1.4 (February 27, 2004) - Target Spec Added K4D551638F-TC36/40 in the data sheet. Revision 1.3 (December 5, 2003) Changed VDD/VDDQ of K4D551638F-TC50 from 2.5V + 5% to 2.6V + 0.1V Revision 1.2 (November 11, 2003) "Wrtie-Interrupted by Read Function" is supported Revision 1.1 (October 13, 2003) Defined ICC7 value Revision 1.0 (October 10, 2003) Defined DC spec Changed part number of 16Mx16 GDDR F-die from K4D561638F-TC to K4D551638F-TC. Revision 0.1 (October 2, 2003) - Target Spec Added Lead free package part number in the data sheet. Removed K4D561638F-TC40 from the data sheet. Revision 0.0 (July 2, 2003) - Target Spec Defined Target Specification - 2 - Rev 1.7 (June 2004) Target Spec K4D551638F-TC 256M GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data ...