K4D26323RA

* VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 2.0 (Jan. 2003) * VDD / VDDQ=2.8V * K4D26323RA-GC Revision History Revision 2.0 (January 16, 2003) Changed package ball height from 0.25mm to 0.35mm 128M DDR SDRAM Revision 1.9 (August 12, 2002) Changed tRC of K4D26323RA-GC2A from 20tCK to 15tCK Changed tRFC of K4D26323RA-GC2A from 22tCK to 17tCK Changed tRAS of K4D26323RA-GC2A from 14tCK to 10tCK Changed tRCDRD of K4D26323RA-GC2A from 7tCK to 5tCK Changed tRCDWR of K4D26323RA-GC2A from 5tCK to 3tCK Changed tRP of K4D26323RA-GC2A from 6tCK to 5tCK Changed tDAL of K4D26323RA-GC2A from 9tCK to 8tCK Changed tRC of K4D26323RA-GC33 from 17tCK to 13tCK Changed tRFC of K4D26323RA-GC33 from 19tCK to 15tCK Changed tRAS of K4D26323RA-GC33 from 12tCK to 9tCK Changed tRCDRD of K4D26323RA-GC33 from 6tCK to 4tCK Changed tRCDWR of K4D26323RA-GC33 from 4tCK to 2tCK Changed tRP of K4D26323RA-GC33 from 5tCK to 4tCK Changed tWR of K4D26323RA-GC33 from 3tCK to 2tCK Changed tDAL of K4D26323RA-GC33 from 8tCK to 7tCK Revision 1.8 (July 18, 2002) Changed power dissipation from 2,0W to 3.3W Revision 1.7 (May 7, 2002) Typo corrected Revision 1.6 (Janaury 29, 2002) Changed CL of K4D26323RA-GC33/36 from...