K4D263238E

K4D263238E-GC 128M GDDR SDRAM 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 1.7 November 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.7 (Nov. 2003) K4D263238E-GC Revision History Revision 1.7 (November 14, 2003) Typo corrected 128M GDDR SDRAM Revision 1.6 (August 14, 2003) Added a note for the input reference voltage of clock in case of differential clocks Revision 1.5 (August 11, 2003) Typo corrected Revision 1.4 (April 30, 2003) Added Lead free package part number in the datasheet Revision 1.3 (April 14, 2003) K4D263238E-GC2A/33/36 support wide voltage range from 2.375V to 2.94V Revision 1.2 (April 7, 2003) Removed K4D263238E-GL36 from the spec. Revision 1.1 (March 17, 2003) Typo corrected Revision 1.0 (February 13, 2003) Defined DC spec Added K4D263238E-GC25 and K4D263238E-GL36 in the spec. - 2 - Rev 1.7 (Nov. 2003) K4D263238E-GC 128M GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL FEATURES VDD/VDDQ = 2.8V ± 5% for -GC25 VDD/VDDQ = 2.5V ± 5% for -GC2A/33/36/40/45 SSTL_2 compatible inputs/outputs 4 banks operation MRS cycle with address key programs -. Read latency 3, 4, 5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave) Full page burst length for sequential bu...