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K4150

Renesas Technology
Part Number K4150
Manufacturer Renesas Technology
Description 2SK4150
Published Jul 28, 2015
Detailed Description 2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current ...
Datasheet PDF File K4150 PDF File

K4150
K4150

Overview
2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.
5 V gate drive  Low drive current  Low on-resistance RDS(on) = 4.
0  typ.
(at ID = 0.
2 A, VGS = 4 V, Ta = 25°C) Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 321 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch ch-a Tch Tstg Preli...


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