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K3911 Datasheet

Part Number K3911
Manufacturers Toshiba
Logo Toshiba
Description MOSFET
Datasheet K3911 DatasheetK3911 Datasheet (PDF)

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 500 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source volt.

  K3911   K3911






Part Number K3919
Manufacturers NEC
Logo NEC
Description 2SK3919
Datasheet K3911 DatasheetK3919 Datasheet (PDF)

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3919 2SK3919-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) FEATURES • Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS .

  K3911   K3911







Part Number K3918
Manufacturers Kexin
Logo Kexin
Description MOSFET
Datasheet K3911 DatasheetK3918 Datasheet (PDF)

SMD Type MOSFICET MOS Field Effect Transistor 2SK3918 Features Low on-state resistance RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A) Low Ciss: Ciss = 1300 pF TYP. 5 V drive available +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +0.25 2.65 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 Absolute Maximum Ratings Ta = 25 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Gate 2 Drain 3 Source Param.

  K3911   K3911







Part Number K3918
Manufacturers NEC
Logo NEC
Description 2SK3918
Datasheet K3911 DatasheetK3918 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that www.DataSheet4U.com ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS.

  K3911   K3911







MOSFET

2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 500 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V 600 V ±30 V 20 A 80 150 W 792 mJ 20 A 15 mJ 150 °C -55 to 150 °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Dera.


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