Part Number
|
K3380 |
Manufacturer
|
Hitachi |
Description
|
Silicon N Channel MOS FET |
Published
|
Aug 1, 2017 |
Datasheet
|
K3380 PDF File
|
Features
• Low on-resistance RDS =1.26 Ω typ.(VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ.(VGS = 4 V , ID = 50 mA)
• 4 V gate drive device.
Outline
SPAK
ADE-208-806 (Z) 1st.Edition.June 1999
D G
S
123
1.Source 2.Drain 3.Gate
2SK3380
Absolute Maximum ...
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