K3057

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) Low Ciss: Ciss = 2100 pF TYP. Built-in gate protection diode Isolated TO-220 package ORDERING INFORMATION PART NUMBER PACKAGE 2SK3057 Isolated TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS Gate to Source Voltage VGSS(AC) Gate to Source Voltage VGSS(DC) Drain Current (DC) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (Tc = 25°C) PT Total Power Dissipation (Ta = 25°C) PT Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 60 ±20 +20, –10 ±45 ±150 30 2.0 150 –55 to +150 22.5 50.6 Notes 1. PW ...