K2995

2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2995 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : : RDS (ON) = 48 mΩ (typ.) : |Yfs| = 30 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 250 V) Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics S Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Not e 1) ymbol VDSS VDGR VGSS ± ID IDP PD EAS 925 IAR EAR 9 Tch 150 Tstg −55~150 ° 30 Rating 250 250 20 30 120 90 Unit V V V A A W mJ A mJ °C C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Not Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range e 2) JEDEC JEITA TOSHIBA ― ― 2-16F1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics S Thermal resistance, channel to case Thermal resistance, channel to ambient ymbol Rth (ch−c) 1. Rth (ch−a) 41. Max 39 6 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25 Ω Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 http://www.Datasheet4U.com 2SK2995 Electrical Chara...