2SK2842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2842
Chopper Regulator, DC−DC Converter ...
2SK2842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2842
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.4 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 9.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source
voltage
Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
500 500 ±30 12 48 40
364
12 4.0 150 −55 to 150
V V V A A W
mJ
A mJ °C °C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability d...
