K2737

2SK2737 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 10 mΩ typ. 4V gate drive devices. High speed switching Outline TO–220CFM ADE-208-533B(Z) 3rd. Edition Jun 1998 D G 123 1. Gate 2. Drain 3. Source S 2SK2737 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 45 180 45 30 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current I GSS Zero gate voltege drain current I DSS Gate to source cutoff voltage VGS(off) Static drain to source on...