2SK2654-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
900V
2Ω
8A
150W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings T(
C=25°C), unless otherwise specified
> Equivalent Circuit
Rating 900 8 32 ±30 8 241 150 150 -55 ~ +150 Un.
2SK2654-01
2SK2654-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
900V
2Ω
8A
150W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings T(
C=25°C), unless otherwise specified
> Equivalent Circuit
Rating 900 8 32 ±30 8 241 150 150 -55 ~ +150 Unit V A A V A mJ W °C °C
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg
- Electrical Characteristics (TC=25°C),
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge
unless otherwise specified
Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=900V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=4A VGS =10V .