K25T120

TrenchStop® Series IKW25T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D  Short circuit withstand time – 10s  Designed for : - Frequency Converters G E - Uninterrupted Power Supply  TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO-247-3  NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IKW25T120 1200V 25A 1.7V 150C K25T120 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  1200V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj T...