2SK2545
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2545
DC−DC Converter, Relay Drive and Mo...
2SK2545
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2545
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z Low drain−source ON resistance
: RDS (ON) = 0.9 Ω(typ.)
z High forward transfer admittance
: |Yfs| = 5.5 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source
voltage
Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
600
V
600
V
±30
V
6
A
24
A
40
W
345
mJ
6
A
4
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual re...