DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2481
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2481...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2481
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high
voltage switching applications.
FEATURES Low On-Resistance
RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
Low Ciss Ciss = 900 pF TYP. High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source
Voltage
VDSS 900 V
Gate to Source
Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)*
ID(pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
70 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.0 A
Single Avalanche Energy**
EAS 65.9 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2 10.0
1.3 ± 0.2
3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX.
4 1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1 2.54
2.8 ± 0.2 2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
Drain
Gate
Body Diode
Source
Document No. D10273EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan
© 1995
2SK2481
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff
Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input C...
