2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier ...
2SK210
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210
FM Tuner Applications VHF Band Amplifier Applications
High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Gate-drain
voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating −18 10 100 125 −55~125 Unit V mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/
voltage and the significant change in JEITA SC-59 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1C operating temperature/current/
voltage, etc.) are within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Gate-drain breakdown
voltage Drain current Gate-source cut-off
voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol IGSS V (BR) GDO...