K2012

Ordering number:ENN4321B N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2012] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Ratings 250 ±30 18 72 2.0 40 150 –55 to +150 Unit V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Souce Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=250V, VGS=0 VGS=±25V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=12A ID=12A, VGS=10V Ratings min typ max Unit 250 V ±30 V 100 µA ±10 µA 1.5 2.5 V 11 18 S 0.12 0.16 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high le...