K2007

2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK2007 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 250 ±30 20 80 20 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2007 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 250 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 2.0 — Forward transfer admittance |yfs| 9.0 Typ — — — — — 0.12 14 Max — — ±10 250 3.0 0.15 — Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr — — — — — — — — — 2340 1000 160 30 125 190 100 1.2 — — — — — — — — 120 — ...