K1B3216BDD

K1B3216BDD Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft - Design target Draft Date Remark September 02, 2004 Preliminary 0.1 Revised - Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’ on page.2 and page.42 Finalize November 01, 2004 Preliminary 1.0 April 06, 2005 Final www.DataSheet4U.com The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 April 2005 K1B3216BDD 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM FEATURES UtRAM GENERAL DESCRIPTION The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance feature. K1B3216BDD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports the traditional SRAM like asynchronous bus operation (asynchronous page read and asynchronous write), the NOR flash like...