Ordering number:EN4208
N-Channel Silicon MOSFET
2SK1897
Ultrahigh-Speed Switching Applications
Features
· Low ON resis...
Ordering number:EN4208
N-Channel Silicon
MOSFET
2SK1897
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-
voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SK1897]
4.5 10.0 2.8 3.2
3.5 7.2 16.0
18.1 5.6
1.6 1.2
0.75 123 2.55 2.55
Specifications
2.55
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Conditions PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD Tc=25°C Tch Tstg
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown
Voltage Gate-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS V(BR)GSS
IDSS IGSS VGS(off) | yfs |
RDS(on) RDS(on)
ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V
2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings 60
±15 25
100 2.0 30 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
60 V
±15 V
100 µA
±10 µA
1.0 2.0 V
16 27
S
30 40 mΩ
40 55 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that...