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K1886 Datasheet

Part Number K1886
Manufacturers Sanyo
Logo Sanyo
Description 2SK1886
Datasheet K1886 DatasheetK1886 Datasheet (PDF)

Ordering number:EN4203 N-Channel Silicon MOSFET 2SK1886 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1886] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol .

  K1886   K1886






Part Number K1889
Manufacturers Sanyo
Logo Sanyo
Description 2SK1889
Datasheet K1886 DatasheetK1889 Datasheet (PDF)

Ordering number:EN4648 N-Channel Silicon MOSFET 2SK1899 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the assembling time for 2SK1899- applied equipment. · High-density surface mount applications. · Small size of 2SK1899-applied equipment. Package Dimensions unit:mm 2090A [2SK1899] 10.2 4.5 1.3 1.5max 8.8 3.0 9.9 0.8 1.4 1 23 0.8 1.2 2.55 2.55 .

  K1886   K1886







Part Number K1888
Manufacturers Sanyo
Logo Sanyo
Description 2SK1888
Datasheet K1886 DatasheetK1888 Datasheet (PDF)

Ordering number:EN4204 N-Channel Silicon MOSFET 2SK1888 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1888] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol .

  K1886   K1886







Part Number K1887
Manufacturers Sanyo
Logo Sanyo
Description 2SK1887
Datasheet K1886 DatasheetK1887 Datasheet (PDF)

Ordering number:EN4646 N-Channel Silicon MOSFET 2SK1887 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2063A [2SK1887] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Sy.

  K1886   K1886







Part Number K1881
Manufacturers Fuji Electric
Logo Fuji Electric
Description 2SK1881
Datasheet K1886 DatasheetK1881 Datasheet (PDF)

2SK1881-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,07Ω 20A 45W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-V.

  K1886   K1886







2SK1886

Ordering number:EN4203 N-Channel Silicon MOSFET 2SK1886 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1886] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Conditions PW≤10µs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tc=25°C Tch Tstg Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID= 1mA VDS=10V, ID=9 A ID=9A, VGS=10V ID=9A, VGS=4V 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 30 ±15 15 60 2.0 25 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit 30 V ±15 V 100 µA ±10 µA 1.0 2.0 V 7 11 S 40 55 mΩ 55 75 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that re.


2015-02-09 : K1841    2SK1846    K1803    2SK1803    2SK1867    K1846    2SK996    K1840    K1839    2SK1833   


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