Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ielt...
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie
Productnnu
18.0±0.5aendc Solder Dip
lifecycle stage.
Power F-MOS FETs
2SK1867
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ
q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown
q Allowing to supply by the radial taping
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown
voltage
Gate to Source
voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS*
900 ±30 ±2 ±6 15
Allowable power dissipation
TC = 25°C PD Ta = 25°C
15 2
Channel temperature
Tch
Storage temperature
Tstg
* L = 7.5mH, IL = 2A, VDD = 50V, 1 pulse
150 −55 to +150
Unit V V A A mJ
W
°C °C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown
voltage VDSS
Gate threshold
voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward
voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse tran...
