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K1849 Datasheet

Part Number K1849
Manufacturers Sanyo
Logo Sanyo
Description 2SK1849
Datasheet K1849 DatasheetK1849 Datasheet (PDF)

Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1849] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temper.

  K1849   K1849






Part Number K1848
Manufacturers Sanyo
Logo Sanyo
Description 2SK1848
Datasheet K1849 DatasheetK1848 Datasheet (PDF)

Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Stora.

  K1849   K1849







Part Number K1847
Manufacturers Sanyo
Logo Sanyo
Description 2SK1847
Datasheet K1849 DatasheetK1847 Datasheet (PDF)

Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1847] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temper.

  K1849   K1849







Part Number K1846
Manufacturers Panasonic
Logo Panasonic
Description Silicon N-Channel Power F-MOS FET
Datasheet K1849 DatasheetK1846 Datasheet (PDF)

Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse A.

  K1849   K1849







Part Number K1841
Manufacturers Sanyo
Logo Sanyo
Description 2SK1841
Datasheet K1849 DatasheetK1841 Datasheet (PDF)

Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2040A [2SK1841] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature .

  K1849   K1849







2SK1849

Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1849] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions PW≤10µs, duty cycle≤1% Parameter Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : MJ Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=150mA ID=150mA, VGS=10V ID=150mA, VGS=4V 0.8 1.1 1 : Gate 2 : Source 3 : Drain SANYO : CP Ratings 100 ±15 250 1 250 150 –55 to +150 Unit V V mA A mW ˚C ˚C Ratings min typ max Unit 100 V 100 µA ±10 µA 1.0 2.0 V 250 500 mS 2.7 3.5 Ω 3.2 4.2 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications.


2015-02-09 : K1841    2SK1846    K1803    2SK1803    2SK1867    K1846    2SK996    K1840    K1839    2SK1833   


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