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K1841 Datasheet

Part Number K1841
Manufacturers Sanyo
Logo Sanyo
Description 2SK1841
Datasheet K1841 DatasheetK1841 Datasheet (PDF)

Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2040A [2SK1841] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature .

  K1841   K1841






Part Number K1849
Manufacturers Sanyo
Logo Sanyo
Description 2SK1849
Datasheet K1841 DatasheetK1849 Datasheet (PDF)

Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1849] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temper.

  K1841   K1841







Part Number K1848
Manufacturers Sanyo
Logo Sanyo
Description 2SK1848
Datasheet K1841 DatasheetK1848 Datasheet (PDF)

Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Stora.

  K1841   K1841







Part Number K1847
Manufacturers Sanyo
Logo Sanyo
Description 2SK1847
Datasheet K1841 DatasheetK1847 Datasheet (PDF)

Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1847] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temper.

  K1841   K1841







Part Number K1846
Manufacturers Panasonic
Logo Panasonic
Description Silicon N-Channel Power F-MOS FET
Datasheet K1841 DatasheetK1846 Datasheet (PDF)

Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse A.

  K1841   K1841







2SK1841

Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2040A [2SK1841] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss ID=10µA, VGS=0 VDS=15V, VGS=0 VGS=±10V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=50mA, f=1kHz VGS=10V, ID=10mA VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz 3.0 3.8nom 1 : Drain 2 : Source 3 : Gate SANYO : SPA Ratings 30 ±12 100 300 200 125 –55 to +125 Unit V V mA mA mW ˚C ˚C Ratings min typ 30 0.01 0.3 0.9 25 50 15 12 4 0.4 max 1 ±10 1.5 25 Unit V µA nA V mS Ω pF pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of.


2015-02-09 : K1841    2SK1846    K1803    2SK1803    2SK1867    K1846    2SK996    K1840    K1839    2SK1833   


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