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K16A60W

Toshiba Semiconductor
Part Number K16A60W
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to cont...
Published Oct 23, 2015
Datasheet PDF File K16A60W PDF File


K16A60W
K16A60W


Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16A60W...




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