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K1419 Datasheet

Part Number K1419
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SK1419
Datasheet K1419 DatasheetK1419 Datasheet (PDF)

  K1419   K1419
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Part Number K1418
Manufacturers Sanyo
Logo Sanyo
Description 2SK1418
Datasheet K1419 DatasheetK1418 Datasheet (PDF)

  K1419   K1419
Ordering number:EN3556 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1418 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1418] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .






Part Number K1417
Manufacturers Sanyo
Logo Sanyo
Description 2SK1417
Datasheet K1419 DatasheetK1417 Datasheet (PDF)

  K1419   K1419
Ordering number:EN3555 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .






Part Number K1416
Manufacturers Sanyo
Logo Sanyo
Description 2SK1416
Datasheet K1419 DatasheetK1416 Datasheet (PDF)

  K1419   K1419
Ordering number:EN3554 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1416] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.55 Parameter Symbol Conditions Drain-to-Source Breakdown .






Part Number K1414
Manufacturers Sanyo
Logo Sanyo
Description 2SK1414
Datasheet K1419 DatasheetK1414 Datasheet (PDF)

  K1419   K1419
Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2077A [2SK1414] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Co.






2SK1419

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