K1418 Datasheet
Ordering number:EN3556
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1418
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1418]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=60V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=25A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=25A, VGS.
Part Number |
K1419 |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
2SK1419 |
Datasheet |
K1419 Datasheet (PDF) |
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
.
Ordering number:EN3555
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1417
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1417]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown .
Ordering number:EN3554
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1416
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1416]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown .
Ordering number:EN4230
N-Channel Silicon MOSFET
2SK1414
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2077A
[2SK1414]
20.0 3.3
5.0
26.0 6.0
2.0 1.0
20.7
2.0 3.4
1.2
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Co.
2SK1418
Ordering number:EN3556
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1418
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1418]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=60V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=25A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=25A, VGS=10V
(Note) Be careful in handling the 2SK1418 because it has no protection diode between gate and source.
2.7 14.0
1 : Gate
0.4
2 : Drain
3 : Source
EIAJ : SC-46
SANYO : TO-220AB
Ratings 60
±20 40
160 70
1.75 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
60 V
100 µA
±100 nA
1.5 2.5 V
15 25
S
0.020 0.026 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremel.
2015-05-29 : K1061 K1442 K1447 K1443 K1451 K1448 A8240 A8113 A8230A A8280