K1413 Datasheet
Part Number |
K1413 |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
2SK1413 |
Datasheet |
K1413 Datasheet (PDF) |
Ordering number:EN4229
N-Channel Silicon MOSFET
2SK1413
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2076B
[2SK1413]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
2.0 1 2 3 3.5 5.45 5.45
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML
Conditions
Ratings 1500 ±20 2 4 3.0 60 150 –55 to +150
Unit V V A A W W
www.DataSheet.co.kr
PW≤10µs, duty cycle≤1% Tc=25°C
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Vol.
Part Number |
K1419 |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
2SK1419 |
Datasheet |
K1419 Datasheet (PDF) |
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
.
Ordering number:EN3556
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1418
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1418]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown .
Ordering number:EN3555
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1417
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1417]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown .
Ordering number:EN3554
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1416
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2052C
[2SK1416]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
0.8 123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
2.55
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown .
Ordering number:EN4230
N-Channel Silicon MOSFET
2SK1414
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching.
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2077A
[2SK1414]
20.0 3.3
5.0
26.0 6.0
2.0 1.0
20.7
2.0 3.4
1.2
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Co.
2SK1413
Ordering number:EN4229
N-Channel Silicon MOSFET
2SK1413
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2076B
[2SK1413]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
2.0 1 2 3 3.5 5.45 5.45
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML
Conditions
Ratings 1500 ±20 2 4 3.0 60 150 –55 to +150
Unit V V A A W W
www.DataSheet.co.kr
PW≤10µs, duty cycle≤1% Tc=25°C
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=1mA, VGS=0 VDS=1200V, VGS=0 VGS=±20V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V 1.5 1.0 1.5 8.0 11.0 Conditions Ratings min 1500 100 ±100 3.5 typ max Unit V µA nA V S Ω
(Note) Be careful in handling the 2SK1413 because it has no protection diode between gate and source.
Continued on next page.
Any and all SANYO products described or contained herein do no.
2006-08-16 : UPC814C UPC814 LTC4053-4.2 IS64WV102416BLL IS61WV102416BLL IS61WV102416ALL IS64WV1024BLL IS63WV1024BLL IS64WV12816BLL IS61WV12816BLL