K1404 Datasheet
Part Number |
K1404 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1404 |
Datasheet |
K1404 Datasheet (PDF) |
2SK1404
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1404
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 5 20 5 35 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1404
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max — — ±10 25.
Part Number |
K1404 |
Manufacturers |
Renesas |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
K1404 Datasheet (PDF) |
2SK1404
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
REJ03G0944-0300 Rev.3.00
May 15, 2006
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.3.00 May 15, 2006 page 1 of 6
2SK1404
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤1%
2. Value at TC = 25°C
Symbol VD.
2SK1404
2SK1404
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1404
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 5 20 5 35 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1404
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max — — ±10 250 3.0 1.5 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 100 A/µs I D = 2.5 A, VGS = 10 V, RL = 12 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V *1 I D = 2.5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward t.
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