K1403 Datasheet
Part Number |
K1403 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1403 |
Datasheet |
K1403 Datasheet (PDF) |
.
Part Number |
K1405 |
Manufacturers |
Hitachi |
Logo |
|
Description |
Silicon N-Channel MOS FET |
Datasheet |
K1405 Datasheet (PDF) |
2SK1405
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • Built-in fast diode (trr = 140 ns) • Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3PFM
D G1
2 3 1. Gate 2. Drain 3. Source
S
2SK1405
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 600 ±30 15 60 15 60 150 –55 to +150
U.
Part Number |
K1404 |
Manufacturers |
Renesas |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
K1404 Datasheet (PDF) |
2SK1404
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter
Outline
REJ03G0944-0300 Rev.3.00
May 15, 2006
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.3.00 May 15, 2006 page 1 of 6
2SK1404
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤1%
2. Value at TC = 25°C
Symbol VD.
Part Number |
K1404 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1404 |
Datasheet |
K1404 Datasheet (PDF) |
2SK1404
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1404
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 600 ±30 5 20 5 35 150 –55 to +150
Unit V V A A A W °.
Part Number |
K1401A |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1401A |
Datasheet |
K1401A Datasheet (PDF) |
2SK1401, 2SK1401A
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
http://www.Datasheet4U.com
2SK1401, 2SK1401A
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1401 2SK1401A Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbo.
2SK1403
.
2005-12-15 : TCO-9133 TCO-909Z TCO-919A TCO-919R UZ7736 UZ7740 UZ7745 UZ7750 UZ7756 UZ7760